State Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academyof Sciences, Wencui Road 62, Shenyang 110016, China;
Laboratory of Solar Cell Technology, Institute of Electrical Engineering, The Chinese Academy ofSciences, No.6 Beiertiao Zhongguancun, Haidian District, Beijing 100190, China;
Laboratory of Solar Cell Technology, Institute of Electrical Engineering, The Chinese Academy ofSciences, No.6 Beiertiao Zhongguancun, Haidian District, Beijing 100190, China;
Laboratory of Solar Cell Technology, Institute of Electrical Engineering, The Chinese Academy ofSciences, No.6 Beiertiao Zhongguancun, Haidian District, Beijing 100190, China;
Laboratory of Solar Cell Technology, Institute of Electrical Engineering, The Chinese Academy of Sciences, No.6 Beiertiao Zhongguancun, Haidian District, Beijing 100190, China;
ZnO; Magnetron sputtering; target-substrate distance; hydrogen;
机译:靶距衬底距离对磁控溅射沉积HAZO薄膜性能的影响
机译:掠射角沉积下靶材到衬底距离变化的射频磁控溅射沉积氧化ha薄膜的研究
机译:基板到腔室壁距离对脉冲-封闭场不平衡磁控溅射(P-CFUBMS)沉积的CrAlN膜的结构和性能的影响
机译:靶距衬底距离对磁控溅射沉积HAZO薄膜性能的影响
机译:通过大功率脉冲磁控溅射沉积的银膜的电学和光学性质。
机译:磁控溅射对CdTe薄膜微结构光学和电学性质的基靶距离调节
机译:基质 - 靶距离和Si共掺杂对磁控溅射沉积的铝锌膜性能的影响