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Microstructure and properties of TiAlN compound films fabricated on AZ91D alloy by magnetron sputtering

机译:磁控溅射在AZ91D合金上制备的TiAlN复合膜的组织和性能

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By means of reaction magnetron sputtering, TiAlN ternary compound films were deposited on AZ91D magnesium alloy substrates. The influence of partial pressure ratio of N2 to Ar (N2/Ar) on the microstructure and properties of TiAlN film was explored with scanning electron microscopy (SEM), X-ray diffraction (XRD), and tests of microhardness, hydrophile and corrosion resistance. The results show that with the increase of N2/Ar partial pressure ratio from 0.5:10 to 1.5:10, Ti2N becomes the main film phase and the size of the crystals cluster decreases. As the N2/Ar ratio is as higher as 2:10, the film crystals change from Ti2N to TiN with coarse clusters. With increase of N2/Ar rate, the hardness, hydrophobic nature and corrosion resistance of the TiAlN film tend to increase.
机译:通过反应磁控溅射,在AZ91D镁合金基底上沉积TiAlN三元化合物膜。通过扫描电子显微镜(SEM),X射线衍射(XRD)以及显微硬度,亲水性和耐蚀性测试,探讨了N2与Ar的分压比(N2 / Ar)对TiAlN膜组织和性能的影响。 。结果表明,随着N2 / Ar分压比从0.5:10增加到1.5:10,Ti2N成为主要的膜相,晶体簇的尺寸减小。当N2 / Ar比高达2:10时,薄膜晶体从Ti2N变为具有粗簇的TiN。随着N2 / Ar比率的增加,TiAlN膜的硬度,疏水性和耐蚀性趋于增加。

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