High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing

机译：快速热退火和微波退火对应变和弛豫GeSn中磷的高掺杂活化

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摘要

High dopant (phosphorus) activation of 24% and 27% in strained and relaxed Ge_0.93Sn_0.07 films are demonstrated by microwave annealing, respectively. The annealing effects on the carrier activation in strained and relaxed GeSn films by RTA and MWA were also investigated.

机译：在应变和松弛的Ge \ n _0.93\nSn\n_{0.07 \ n薄膜。还研究了退火对应变和弛豫的GeSn膜中RTA和MWA激活载流子的影响。}

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来源
《2019 Electron Devices Technology and Manufacturing Conference》|2019年|44-46|共3页
会议地点 Singapore(SG)
作者
Jia-You Liu; Po-Yuan Chiu; Yen Chuang; Chia-You Liu; Guang-Li Luo; Jiun-Yun Li;
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作者单位

Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan, R. O. C;

Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan, R. O. C;

Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan, R. O. C;

Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan, R. O. C;

National Nano Device Laboratories, Hsin-Chu, 30078, Taiwan, R. O. C;

Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan, R. O. C;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Annealing; Resistance; Films; Phosphorus; Implants; Germanium; Electron devices;

机译：退火;电阻;薄膜;磷;发光;锗;电子器件;;

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专利

1. Microwave annealing, a low-thermal-budget process for dopant activation in phosphorus-implanted MOSFET devices [J] . Lim Cheol-Min, Cho Won-Ju Journal of the Korean Physical Society . 2016,第5期

机译：微波退火，用于磷注入的MOSFET器件中掺杂剂激活的低热预算工艺
2. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings [J] . F. Lanzerath, D. Buca, H. Trinkaus, Journal of Applied Physics . 2008,第4期

机译：通过快速热退火和闪光灯退火，硼在绝缘体中和应变硅上的活化和扩散
3. Study on Ultra Shallow Junction n-MOS with 350℃ Microwave Annealing for Activation of Phosphorus Dopants in Germanium [J] . Tzu-Lang Shih, Wen-Hsi Lee Journal of Electrical and Electronic Engineering . 2017,第1期

机译：350℃微波退火超浅结n-MOS激活锗中磷掺杂的研究
4. High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing [C] . Jia-You Liu, Po-Yuan Chiu, Yen Chuang, Electron Devices Technology and Manufacturing Conference . 2019

机译：快速热退火和微波退火应变和松弛GEN中磷的高掺杂剂活化
5. Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing. [D] . Camillo-Castillo, Renata A. 2006

机译：在快速辅助快速热退火过程中，硼的活化和扩散会改变硅的初始工艺条件。
6. Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing [O] . Chin-Wei Hsu, Wei-Yen Wang, Kuan-Ting Wang, -1

机译：通过硅烷化合物改性和快速热退火处理化学镀镍磷膜在硅片上的附着力
7. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings [O] . Lanzerath, F., Buca, D., Trinkaus, H., 2008

机译：通过快速热退火和闪光灯退火使硅和绝缘子上的硅中的硼活化和扩散
8. Rapid thermal annealing effects in In(x)Ga(1-x)As/GaAs strained-layer superlattices. [R] . J. A. Olsen E. L. Hu D. R. Myers J. F. Klem A. Skumanich 1991

机译：In（x）Ga（1-x）as / Gaas应变层超晶格中的快速热退火效应。

High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing

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