Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability

摘要

This paper investigates hot carrier (HCEs) and trapped charges reliability issues of junctionless accumulation mode (JAM) nanotube MOSFET. Further leakage current, short channel effects (SCEs), threshold voltage and transconductance generation factor (TGF) have also been studied. Furthermore effect of hot carrier induced trapped charges and its effects on these factors have also been demonstrated. Therefore a novel dual metal-stacked hetero dielectric (DMSHD)-JAM nanotube MOSFET has been proposed and ratio optimized to effectively increase the reliability against these issues.