CHARACTERISTICS OF SULFUR- AND InGaP-PASSIVATED InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

摘要

The InGaP/GaAs heterojunction bipolar transistors (HBT's) with the sulfur-treatment base layer have been successfully implemented for comparing with HBT's fabricated using emitter-edge thining InGaP layer. It is found that InGaP passivation-layer thickness play an important role on HBT performances, limiting its application in structural optimization. Whereas the sulfur-passivated HBT's demonstrated a promising results as compared InGaP- and non-passivated ones. The sulfur-passivated devices also exhibit very good linearity in wide range of collector (10~(-5)to 10~(-1) A).