INVESTIGATION OF CHARGE CONTROL RELATED PERFORMANCES IN DOUBLE-GATE SOI MOSFETs

摘要

In this work we have shown the benefits of (even sub-0.1 μm) double-gate SOI MOSFETs for digital and analog performances. We verified applicability of the quasi double-gate technique with regard to actual double-gate devices and demonstrated that it is valid in strong inversion regime only. Using this technique instead of real double-gate in the weak inversion regime gives a large error and is not acceptable.