Improved Manufacturability of AlGaAs/GaAs Pnp Heteroj unction Bipolar Transistors

摘要

Specially designed Pnp heterojunction bipolar transistors (HBT's) in the AlGaAs/GaAs material system can offer improved radiation response over commercially-available silicon bipolar junction transistors (BJT's). To be a viable alternative to the silicon Pnp BJT, improvements to the manufacturability of the HBT were required. Utilization of a Pd/Ge/Au non-spiking ohmic contact to the base and implementation of a PECVD silicon nitride hard mask for wet etch control were the primary developments that led to a more reliable fabrication process. The implementation of the silicon nitride hard mask and the subsequent process improvements increased the average electrical yield from 43% to 90%.