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Electrical resistivity characterization of silicon carbide by various methods

机译:用各种方法表征碳化硅的电阻率

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In this paper, the variation of the resistivity of SiC powder at low and high voltage as a function of milling time was investigated by controlling the particle size, morphology and compactness (applied pressure). The particle shape and size of commercially available SiC powders were altered by ball milling. The electrical properties of the various SiC powders were characterized at low voltage by using a pressure controlled ohmmeter and frequency-domain spectroscopy. A resistivity increase from 7 to 54 MΩ.cm was observed when the grinding time increased from 5 to 30 minutes, which corresponded to a decrease of the particle size from 54 µm to ∼4.5 µm. The nonlinear characterization I–V for high electrical field was investigated. X-ray diffraction and scanning electron microscopy have been carried out to highlight the size decreasing and crystalline structure of the milled powder.
机译:通过控制粒径,形态和致密性(施加压力),研究了SiC粉在低电压和高电压下的电阻率随研磨时间的变化。通过球磨法改变可商购的SiC粉末的颗粒形状和尺寸。通过使用压力控制欧姆表和频域光谱法在低压下表征了各种SiC粉的电性能。当研磨时间从5分钟增加到30分钟时,观察到电阻率从7增加到54MΩ.cm,这对应于粒度从54μm减小到〜4.5μm。研究了高电场的非线性表征IV。已经进行了X射线衍射和扫描电子显微镜以突出研磨粉末的尺寸减小和晶体结构。

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