Electrical resistivity studies of chromium and nickel carbide infiltrated reaction sintered silicon carbide

摘要

Reaction sintered silicon carbide with 5% nickelcat-bide 5% chromium carbide, 2.5% nickel carbide and 2.5%chromium carbide together were prepared. Electrical resistivity ofthese materials was determined from room temperature (RT) to1000℃. The resistivity decreases with increase in temperature.The variation in electrical resistivity from RT to 1000℃ was 0.75 to 0.030 ohm.cm for RSSC infiltrated with chromium carbidewhereas 0.208 to 0.193 ohm.cm with that of 2.5% chromiumcarbide and 2.5% nickel carbide together.