首页> 外文会议>Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE >Silicon-based on-chip antenna design for millimeter-wave/THz applications
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Silicon-based on-chip antenna design for millimeter-wave/THz applications

机译:基于硅的片上天线设计,用于毫米波/太赫兹应用

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摘要

In this paper, three high-gain on-chip antennas are proposed using three different silicon-based technologies in the millimeter-wave/THz frequency range. A modified Vivaldi antenna is first implemented using the micro-fabricated floating process. In the proposed process, the top metal layer is supported by metal vias, separating it from the silicon substrate for low-loss application. The antenna gain of 5.5 dBi is obtained with 78% radiation efficiency. A monopole antenna is subsequently designed using the silicon-benzocyclobutene (Si-BCB) process, with micro-machined backed cavity for high efficiency and wideband application. The simulated gain of this antenna is 6 dBi with 88% radiation efficiency. Our third proposed on-chip antenna is fabricated using commercial 0.18-Hm CMOS technology. The antenna gain and efficiency are improved by the dielectric resonator on the surface of the antenna. The measured gain is 2.7 dBi with radiation efficiency of 43% The three proposed antennas with different silicon compatible processes are therefore suitable for application in the millimeter-wave/THz integrated circuits.
机译:本文使用毫米波/太赫兹频率范围内的三种不同的基于硅的技术,提出了三种高增益片上天线。修改后的Vivaldi天线首先使用微制造的浮动工艺实现。在提出的工艺中,顶部金属层由金属通孔支撑,将其与硅基板分开以进行低损耗应用。天线增益为5.5 dBi,辐射效率为78%。随后,采用硅-苯并环丁烯(Si-BCB)工艺设计了单极天线,并带有微加工后腔,以实现高效率和宽带应用。该天线的模拟增益为6 dBi,辐射效率为88%。我们提出的第三个片上天线是使用商用0.18-Hm CMOS技术制造的。通过天线表面上的介电共振器可以提高天线增益和效率。测得的增益为2.7 dBi,辐射效率为43%。因此,三种建议的具有不同硅兼容工艺的天线适用于毫米波/太赫兹集成电路。

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