首页> 外文会议>Electronic Components Technology Conference, 2000. 2000 Proceedings. 50th >Development of a wafer-level burn-in test socket for fine-pitch BGA interconnect
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Development of a wafer-level burn-in test socket for fine-pitch BGA interconnect

机译:开发用于微间距BGA互连的晶圆级老化测试插座

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Contact beam structures for fine pitch (0.5-mm) test socket that will mate with 95/5 lead/tin solder balls (50/spl plusmn/5 /spl mu/m in diameter) were fabricated by conventional integrated circuit processing technology. A range of dimensions for contact beam structure (cross and bridge) were tested for mechanical behavior and electrical performance. Non-linear finite element models (ANSYS 5.5) were used to predict the force and stress between the copper thin film beam structure and the solder ball. To avoid plastic deformation of the solder ball, numerical analysis suggests that the contact force on 50 /spl mu/m solder balls should be lower than 17 mN. The yield strength of sputtered copper thin film (2 /spl mu/m) is inferred from experimental and numerical data to be in the range of 2.80-3.09 GPa. The best cross and bridge structures are presented in addition to a new "Meander" structure which, numerically, shows the best potential.
机译:细间距(0.5毫米)测试插座的接触梁结构将与95/5铅/锡焊球(直径为50 / spl plusmn / 5 / spl mu / m)配合使用,是通过传统的集成电路处理技术制造的。对接触梁结构(跨接和桥接)的一系列尺寸进行了机械性能和电气性能测试。使用非线性有限元模型(ANSYS 5.5)来预测铜薄膜梁结构和焊球之间的力和应力。为避免焊球发生塑性变形,数值分析表明,在50个/ splμm/ m焊球上的接触力应低于17 mN。从实验和数值数据推断出溅射的铜薄膜的屈服强度(2 / spl mu / m)在2.80-3.09 GPa的范围内。除了新的“ Meander”结构外,还提供了最佳的跨桥和桥梁结构,从数字上显示了最佳的潜力。

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