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Chip-last embedded actives and passives in thin organic package for 1–110 GHz multi-band applications

机译:采用薄有机封装的最后一种嵌入式有源和无源芯片,适用于1–110 GHz多频带应用

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This paper presents for the first time a novel manufacturing-compatible organic substrate and interconnect technology using ultra-thin chip-last embedded active and passive components for digital, analog, MEMS, RF, microwave and millimeter wave applications. The architecture of the platform consists of a low-CTE thin core and minimum number of thin build up organic dielectric and conductive layers. This organic substrate is based on a new generation of low-loss and thermally-stable thermosetting polymers (RXP-1 and RXP-4). Unlike LCP- and Teflon-based materials, the RXP material system is fully compatible with conventional FR-4 manufacturing processes. Ultra-thin silicon test die (55µm thick) has been embedded in a 60µm deep cavity with a 6-metal layer RXP substrate and a total thickness of 0.22mm. The embedded IC is interconnected to the substrate by ultra-fine pitch Cu-to-Cu bonding with polymer adhesives. This novel interconnection process performed at 180°C, has passed 1,000 thermal shock cycles in reliability testing. Because of manufacturing process simplicity and unparalleled set of benefits, the chip-last technology described in this paper provides the benefits of chip-first without its disadvantages and thus enables highly miniaturized, multi-band, high performance 3D modules by stacking embedded 3D ICs or packages with embedded actives, passives and MEMS devices.
机译:本文首次展示了一种新颖的制造兼容的有机基板和互连技术,该技术使用了超薄芯片后嵌入式有源和无源元件,用于数字,模拟,MEMS,RF,微波和毫米波应用。该平台的体系结构由低CTE薄核和最少数量的薄堆积有机介电层和导电层组成。这种有机基材基于新一代的低损耗和热稳定的热固性聚合物(RXP-1和RXP-4)。与基于LCP和Teflon的材料不同,RXP材料系统与常规FR-4制造工艺完全兼容。超薄硅测试管芯(55μm厚)已嵌入到一个60μm深的空腔中,该空腔具有6个金属层的RXP基板,总厚度为0.22mm。嵌入式IC通过使用聚合物粘合剂的超细间距铜对铜键合与基板互连。这种在180°C下执行的新颖互连工艺在可靠性测试中已经通过了1,000次热冲击循环。由于制造工艺的简单性和无与伦比的优势,本文所述的倒数第二种技术提供了无芯片优先的优点,而没有缺点,因此通过堆叠嵌入式3D IC或集成芯片,可以实现高度小型化的多频段高性能3D模块。具有嵌入式有源,无源和MEMS器件的封装。

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