Influence of photoresist pattern on charging damage during high current ion implantation

机译：大电流离子注入过程中光刻胶图案对充电损伤的影响

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The influence of photoresist pattern on charging damage of gate oxides during high current arsenic implantation is studied. Metal-oxide-semiconductor (MOS) capacitors of 10 μm² active area and 4.5 nm oxide thickness connected with various types of poly antennas and resist patterns on top were processed, whereby the resist overlapped and/or enclosed the gate electrode during ion implantation. The evaluation of the devices was performed by leakage current and charge to breakdown (Qbd) measurements. The influence of resist size, perimeter, and coverage of polyelectrodes is described in detail.

机译：研究了光致抗蚀剂图案对高电流砷注入过程中栅氧化物电荷损伤的影响。处理面积为10μm^{2 的金属氧化物半导体（MOS）电容器，氧化层厚度为4.5 nm，并与各种类型的多晶硅天线和顶部的抗蚀剂图形连接，从而使抗蚀剂重叠和/或封闭离子注入过程中的栅电极。通过泄漏电流和电荷击穿（Qbd）测量对器件进行评估。详细描述了抗蚀剂尺寸，周长和聚电极覆盖率的影响。}

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《Design Systems with Users in Mind: The Role of Cognitive Artefacts》|1995年|p.106-109|共4页
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Dirnecker T.; Ruf A.; Frey L.; Beyer A.; Bauer A.J.; Henke D.; Ryssel H.;
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Device Technol. Div., Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany;

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正文语种 eng
中图分类自动化技术、计算机技术;
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Influence of photoresist pattern on charging damage during high current ion implantation

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