Influence of Oxygen Ion Implantation on the Damage and Annealing Kinetics of Iron-211 Implanted Sapphire

摘要

The effects of implanted oxygen on the damage accumulation in sapphire which was211u001epreviously implanted with iron was studied for (0001) sapphire implanted with 211u001eiron and then with oxygen. The energies were chosen to give similar projected 211u001eranges. One series was implanted with a 1:l ratio (4x10(sup 16) ions/cm(sup 2) 211u001eeach) and another with a ratio of 2:3 (4x10(sup 16) fe(sup +)/cm(sup 2); 6x10(sup 211u001e16) O(sup +)/cm(sup 2)). Retained damage, X, in the Al-sublattice, was compared 211u001eto that produced by implantation of iron alone. The observed disorder was less 211u001efor the dual implantations suggesting that implantation of oxygen enhanced 211u001edynamic recovery during implantation. Samples were annealed for one hour at 800 211u001eand 1200 C in an oxidizing and in a reducing atmosphere. No difference was found 211u001ein the kinetics of recovery in the Al-sublattice between the two dual implant 211u001econditions. However, the rate of recovery was different for each from samples 211u001eimplanted with iron alone.