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Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions
Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions
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机译:具有由退火的氧离子注入区形成的隔离区的半导体器件的制造方法
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摘要
Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.
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