首页> 外文会议>Design-Process-Technology Co-optimization for Manufacturability IX >TOPOGRAPHY AWARE DFM RULE BASED SCORING FOR SILICON YIELD MODELING
【24h】

TOPOGRAPHY AWARE DFM RULE BASED SCORING FOR SILICON YIELD MODELING

机译:基于拓扑AFM的DFM规则评分的硅产量建模

获取原文
获取原文并翻译 | 示例

摘要

DFM rule based scoring is associated with manufacturability rules checking and applying the scoring to predict the yield entitlement for an IC chip design. Achieving high DFM score is one of the key requirements to get high yield. The DFM scoring methodology is currently limited to DFM recommend rules and their associated failure rates. In contrast to failure mechanism, chemical-mechanical polishing (CMP) step topography variations places an important role to it. In this paper, we present an advanced DFM analysis flow to compute DFM score that incorporate topography variation along with recommend rule scoring using complex scoring model to increase silicon yield correlation.
机译:基于DFM规则的评分与可制造性规则检查相关联,并应用评分来预测IC芯片设计的良率。获得高DFM分数是获得高产量的关键要求之一。 DFM评分方法目前仅限于DFM建议规则及其相关的失败率。与失效机理相反,化学机械抛光(CMP)台阶形貌变化对此起着重要作用。在本文中,我们提出了一种先进的DFM分析流程来计算DFM分数,该分数结合了地形变化以及使用复杂评分模型来提高硅良率相关性的推荐规则评分。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号