首页> 外国专利> Interactively tailoring topography of integrated circuit layout in accordance with electromigration model-based minimum width metal and contact/via rules

Interactively tailoring topography of integrated circuit layout in accordance with electromigration model-based minimum width metal and contact/via rules

机译:根据基于电迁移模型的最小宽度金属和接触/过孔规则,交互式地调整集成电路布图的拓扑结构

摘要

An interactive electromigration rule-based topography layout adjustment method is provided as an adjunct to a computer aided design tool, in particular a design rule check (DRC) mechanism using a design rule database for defining topography parameters that conform with a given semiconductor wafer fabrication process. Using a set of customized design rule statements, a DRC program is able (Fig 7) to provide a circuit designer with the ability to identify and interactively change, as necessary, dimensions of portions of branches of interconnect (metal, contacts, vias) within an integrated circuit layout design to allow for electromigration of material statements being customized in accordance with circuit simulated-operation-derived worst-case-current conditions as applied to a prescribed set of electromigration-based minimum width rules for interconnect metal, contacts and vias. IMAGE
机译:作为计算机辅助设计工具的辅助,提供了一种基于交互式电迁移规则的地形布局调整方法,特别是使用设计规则数据库的设计规则检查(DRC)机制,用于定义符合给定半导体晶圆制造工艺的地形参数。使用一组定制的设计规则语句,DRC程序能够(图7)为电路设计人员提供识别和交互更改内部互连部分(金属,触点,过孔)的部分尺寸的能力。一种集成电路布图设计,以允许根据根据电路模拟操作得出的最坏情况下的电流条件定制材料说明的电迁移,该条件适用于互连金属,触点和过孔的一组规定的基于电迁移的最小宽度规则。 <图像>

著录项

  • 公开/公告号GB2283117A

    专利类型

  • 公开/公告日1995-04-26

    原文格式PDF

  • 申请/专利权人 * HARRIS CORPORATION;

    申请/专利号GB19940016264

  • 发明设计人 CHARLES E * WANDS;

    申请日1994-08-11

  • 分类号G06F17/50;

  • 国家 GB

  • 入库时间 2022-08-22 04:06:33

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