Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects

摘要

Optical tools such as infra-red absorption, photoluminescence, or Raman spectroscopy have been used for decades to observe the localized vibrational modes associated with impurities in semiconductors. The frequencies of these modes slightly shift with the isotope of the impurity while host-atom isotopes often show up as shoulders in the spectra. These shifts and shoulders are precious indicators of the nature of the defect. But sometimes, very small isotope-related frequency shifts cause very large changes in vibrational lifetimes. Impurity-isotope effects have now been predicted to impact the thermal conductivity of semiconductors containing a few atomic percent of impurities. Impurity isotope effects can be surprisingly large.