Recognition and Characterization of Precipitates in Annealed Cz and FZ Silicon by S.I.R.M. and L.B.I.C

摘要

A Scanning InfraRed Microscope, a Light Beam Induced Current mapping equipement, a Fourier Transform infrared spectroscope, and a minority carrier diffusion length measurement tool have been associated to detect precipitates in annealed Czochralski silicon wafers and to evaluate their recombination strenght with or whithout metallic contamination. The influence of a phosphorus diffusion was also investigated. A comparison is made whith Float Zone silicon which contains less oxygen.