首页> 外国专利> MANUFACTURING METHOD OF FZ SINGLE CRYSTAL SILICON USING SILICON CRYSTAL ROD MANUFACTURED BY CZ METHOD AS RAW MATERIAL

MANUFACTURING METHOD OF FZ SINGLE CRYSTAL SILICON USING SILICON CRYSTAL ROD MANUFACTURED BY CZ METHOD AS RAW MATERIAL

机译:以CZ法制造的硅晶体棒为原材料,制造FZ单晶硅的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a silicon single crystal to be manufactured by FZ method with prescribed resistivity.;SOLUTION: In the method of manufacturing silicon single crystals by FZ method, a P type or N type silicon crystal rod 1 having resistivity of 50 Ωcm or higher, which is a raw material stably available in high quality and manufactured by a CZ method, is used as a silicon raw material rod 1, instead of a high-price polycrystal silicon raw material rod usually used for the FZ method; the silicon raw material rod 1 is recrystalized to be the P type or N type silicon single crystal having desired resistivity by gas-doping the silicon raw material rod 1 with an impurity of the same conduction type as that of the silicon raw material rod 1.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种以规定的电阻率稳定地制造通过FZ法制造的硅单晶的方法。解决方法:在通过FZ法制造硅单晶的方法中,P型或N型硅晶体棒作为硅原料棒1,使用电阻率50Ωcm以上的高品质稳定且可以通过CZ法制造的原料1,通常代替高价的多晶硅原料棒来用作硅原料棒1。用于FZ方法;通过用与硅原料棒1相同的导电类型的杂质气体掺杂硅原料棒1,将硅原料棒1重结晶为具有期望电阻率的P型或N型硅单晶。 ;版权:(C)2008,日本特许厅和INPIT

著录项

  • 公开/公告号JP2007314374A

    专利类型

  • 公开/公告日2007-12-06

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP20060146240

  • 发明设计人 SUZUKI SATOSHI;KODAMA YOSHIHIRO;

    申请日2006-05-26

  • 分类号C30B29/06;C30B13/12;

  • 国家 JP

  • 入库时间 2022-08-21 20:20:06

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