Investigation of influence of thermal and radiation processing on impurity centers in silicon and silicon-based structuers

摘要

In this paper the results of studies of the influence of radiation and thermal processing on activation of impurity centers (Au, Ag, Pt, Rh) in p-n-structures based on doped silicon are presented. It is shown that the thermal processing in the temperature range of 600-700 deg leads to significant increasing of the concentration of electrically active impurities in the samples irradiated by #gamma#-rays as compared to the non-irradiated samples as well as to increasing of their decay temperature. These efects depend on the type and fluence of irradiation and can be explained by formation of additional electrically active states of impurities due to decay of complexes of radiation defects and electrically non-active impurities. A possible mechanism of activation process of impurity centers in silicon under radiation and thermal processing is discussed.