Effect of a Magnetic Field on Thermally Stimulated Ionization of Impurity Centers in Semiconductors by Submillimeter Radiation

摘要

The probability of electron tunneling from a bound state into a free state in crossed ac electric and dc magnetic fields is calculated in the quasiclassical approximation. It is shown that a magnetic field decreases the electron tunneling probability. This decreases the probability of thermally activated ionization of deep impurity centers by submillimeter radiation. The logarithm of the ionization probability is a linear function of the squared amplitude of the electric field and increases rapidly with the frequency of the electric field.