Influence of a magnetic field on an exciton bound to an ionized donor impurity in GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells - art. no. 085304

摘要

The influence of an external uniform magnetic field applied along the growth axis on the ground-state energy of an exciton bound to an ionized donor impurity in a semiconductor quantum well with finite potential barriers is investigated. The binding energy of the complex is calculated variationally within the envelope-function approximation as a function of the well width for arbitrary intensity of the field. The results show that the magnetic field enhances the correlation energy of the complex in the cases of GaAs/Ga1-xAlxAs and the CdTe/Cd1-xZnxTe quantum wells. The influence of the magnetic field and the quantum confinement on the stability against dissociation is also discussed. [References: 20]