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1s-like state binding energy of a donor impurity bound to Xz valleys of GaAs/AlAs type II quantum dots with an uniform applied magnetic field

机译:1S状状态结合能量与GaAs / AlaS型XZ谷的供体杂质的能量有均匀施加的磁场

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In this paper we calculate the binding energy of a donor impurity in the 1s-like state bound to X valleys of GaAs/AlAs type II quantum dots, using an anisotropic variational method, which allows us to take into account the anisotropy of the effective mass and quantum confinement. The binding energy is plotted against the radius of the cylinder and the uniform magnetic field applied along the cylinder axis. The binding energies have a monotone behavior with the cylinder radius for different magnetic fields and almost constant behavior with increasing magnetic field.
机译:在本文中,我们使用各向异性分析方法计算在与GaAs / Alas II类量子点的X谷的1S样状态中的供体杂质的结合能量,这使我们能够考虑有效质量的各向异性和量子约束。绘制粘合能量靠在圆柱体的半径和沿圆柱轴施加的均匀磁场绘制。结合能量具有与汽缸半径的单调行为,用于不同的磁场,以及随着磁场的增加几乎恒定的行为。

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