...
首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >The External Electric and Magnetic Fields Effect on Binding Energy of Hydrogenic Donor Impurity in a InGaAsP/InP Core-Shell Quantum Dot
【24h】

The External Electric and Magnetic Fields Effect on Binding Energy of Hydrogenic Donor Impurity in a InGaAsP/InP Core-Shell Quantum Dot

机译:外部电场和磁场对InGaAsp / InP核心壳量子点中氢供体杂质的结合能量的影响

获取原文
获取原文并翻译 | 示例

摘要

In the effective-mass envelope-function theory, we calculate the ground state binding energy of a hydrogenic donor impurity in a core-shell quantum dot through the plane wave basis method. The effects of electric field, magnetic field, core radius, and shell thickness on the binding energy are analyzed in detail. The symmetrical distribution of binding energy is destroyed by electric field and the binding energy increases as magnetic field increases. Moreover, the results show that the effects of electric field and magnetic field are more obvious for an impurity located at the side and center of core-shell quantum dot, respectively. The donor impurity binding energy decreases with the increase of core radius. The donor impurity binding energy increases with the increase of barrier width, but when the barrier width reaches to a larger value, the binding energy no longer increases.
机译:在有效质量包络功能理论中,我们通过平面波基的方法计算核心壳量子点中的氢供体杂质的地态结合能。 详细分析了电场,磁场,芯半径和壳厚度对结合能的影响。 当磁场增加时,电场被电场破坏了结合能量的对称分布,并且结合能量增加。 此外,结果表明,对于位于核心 - 壳量子点侧和中心的杂质,电场和磁场的效果分别更明显。 随着核心半径的增加,供体杂质结合能量降低。 随着阻挡宽度的增加,供体杂质结合能量增加,但是当屏障宽度达到更大的值时,结合能量不再增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号