Theoretical analysis of the minority carrier lifetime in a multicrystalline wafer with spatially varying defect distribution

摘要

Multicrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, #tau#. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of #tau#.