Department of Electronic Electrical Engineering, University College London, Torrington Place, London WC1E 6BT, United Kingdom;
Department of Electronic Electrical Engineering, EPSRC National Centre for III-V Technologies, University of Sheffield, Shef;
quantum dots; high-growth-temperature spacer layer; P-type modulation; molecular beam epitaxial growth; semiconductor lasers;
机译:高性能直接调制1.3-μm掺杂的InAs-InGaAs量子点激光器
机译:具有非常低的连续波室温阈值电流的高性能三层1.3μmInAs-GaAs量子点激光器
机译:高模增益1300 nm In(Ga)As-GaAs量子点激光器
机译:高性能1300-NM INAS / GAAS量子点激光器
机译:1.3毫米InAs量子点激光器的表征和建模。
机译:1.3μmInAs / GaAs自组装量子点激光器的热效应和小信号调制
机译:高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器,具有极低的连续波室温阈值电流 ud