High-Modal Gain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers

摘要

A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 (mu)m were fabricated and tested. A high modal gain of 41 cm~(-1) was obtained at room temperature corresponding to a modal gain of approx6 cm~(-1) per QD layer, which is very promising to enable the realization of 1.3-(mu)m ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-(mu)m-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm~(2) and 67percent, respectively.