Thermal donors removing in silicon single crystal wafers

摘要

The paper solves the optimization problem of thermal donors (TD) removing in Si-single crystal wafers produced in the TEROSIL company. TD are removed during subsequent annealing process by temperature 620℃ and time 20 min. Amount of the residual TD is determined by electrical resistivity measurement. The first results indicate possibility to modify the annealing process in order to increase its effectiveness.