首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Elucidating the Physiochemical and Lithographic Behavior of Ultra-Thin Photoresist Films
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Elucidating the Physiochemical and Lithographic Behavior of Ultra-Thin Photoresist Films

机译:阐明超薄光刻胶膜的理化和光刻行为

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As resist feature sizes and film thicknesses continue to shrink in dimension, a number of resist feature size and film thickness dependent effects are being observed in the lithographic performance of high resolution photoresists. In order to understand these phenomena, a better understanding of the physiochemical behavior of complex multi-component organic resist thin films is needed. As a first step in that direction, a series of model photoresists were studied in an effort to begin to understand the thermophysical properties of such multi-component thin films. The influence of photoacid generator (PAG) loading and PAG chemistry on the glass transition behavior using the model photoresists was studied. A thermal flow experiment was used to characterize an "apparent glass transition temperature" of the resist thin films as a function of PAG type and loading. These results were compared to traditional glass transition measurements made on the same resist compositions using differential scanning calorimetry (DSC). The two methods, namely DSC and the thermal flow measurement, yielded very different results depending on the type of PAG used. Further studies using ToF SIMS to profile the distribution of PAG in the resist thin films revealed that the two PAGs focused on in this work, a triphenylsulfonium triflate (TPS.OTF) and a triphenylsulfonium nonaflate (TPS.ONF), exhibited very different distribution behavior in resist thin films. In the case of TPS.OTF, the PAG was observed to show a depletion region near the resist-substrate interface while the TPS.ONF PAG was relatively homogeneously distributed in the resist thin films. In the case of TPS.ONF, it was also the resist system which showed very different thermophysical behavior when comparing the glass transition temperature measured using DSC to the thermal flow temperature measurement. This work points out the fact that component distribution and thin film effects must be carefully considered in interpreting and analyzing the behavior of multi-component thin films.
机译:随着抗蚀剂特征尺寸和膜厚度尺寸的不断缩小,在高分辨率光致抗蚀剂的光刻性能中观察到许多抗蚀剂特征尺寸和膜厚度依赖性效应。为了理解这些现象,需要对复杂的多组分有机抗蚀剂薄膜的物理化学行为有更好的理解。作为朝这个方向迈出的第一步,研究了一系列模型光致抗蚀剂,以期开始理解这种多组分薄膜的热物理性质。使用模型光刻胶研究了光酸产生剂(PAG)的负载量和PAG化学性质对玻璃化转变行为的影响。使用热流实验来表征抗蚀剂薄膜的“表观玻璃化转变温度”与PAG类型和负载的关系。将这些结果与使用差示扫描量热法(DSC)在相同的抗蚀剂组合物上进行的传统玻璃化转变测量进行了比较。 DSC和热流量测量这两种方法根据所用PAG的类型产生了截然不同的结果。使用ToF SIMS对抗蚀剂薄膜中PAG的分布进行剖析的进一步研究表明,在这项工作中重点研究的两个PAG,三氟甲磺酸三苯TP(TPS.OTF)和九氟三苯磺酸((TPS.ONF)表现出截然不同的分布行为在抗蚀剂薄膜中。在TPS.OTF的情况下,观察到PAG在抗蚀剂-基底界面附近显示出耗尽区,而TPS.ONF PAG则相对均匀地分布在抗蚀剂薄膜中。在TPS.ONF的情况下,当将使用DSC测量的玻璃化转变温度与热流温度测量值进行比较时,也是抗蚀剂系统表现出截然不同的热物理行为。这项工作指出了以下事实:在解释和分析多组分薄膜的行为时,必须仔细考虑组分分布和薄膜效应。

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