1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering

摘要

Large reverse leakage current is one of limiting factors in realizing applicable regrown GaN p-n junctions. Influences of different dry etching processes have been comprehensively investigated. The reverse leakage current for the regrown sample could be significantly suppressed down to 3.5 nA @ 600 V (