METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODE

摘要

Compared with the typical Si and GaAs material, a wide bandgap material (III-N compound) has the better electronic properties, particularly the operation stability and the temperature sensitivity, and is extremely suitable for the high power electronic application. The invention proposes a high power vertical GaN device for providing the reverse breakdown voltage higher than or equal to 600 V, the lower on-resistance is lower than or equal to 5 mΩ-cm² and the forward current as high as 3 A/mm².