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METHOD FOR MANUFACTURING VERTICAL TYPE LIGHT EMITTING DIODE, VERTICAL TYPE LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING ULTRAVIOLET RAY LIGHT EMITTING DIODE, AND ULTRAVIOLET RAY LIGHT EMITTING DIODE
METHOD FOR MANUFACTURING VERTICAL TYPE LIGHT EMITTING DIODE, VERTICAL TYPE LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING ULTRAVIOLET RAY LIGHT EMITTING DIODE, AND ULTRAVIOLET RAY LIGHT EMITTING DIODE
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机译:垂直型发光二极管的制造方法,垂直型发光二极管,紫外线发光二极管的制造方法以及紫外线发光二极管
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摘要
The present invention relates to a vertical type light emitting diode, a method for manufacturing the same, an ultraviolet ray light emitting diode, and a method for manufacturing the same. A vertical type light emitting diode according to the present invention is on the basis of a nitride semiconductor having a p-n conjunction structure, a transparent material layer is formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. After a stereoscopic pattern is formed in the transparent material layer, the p-electrode is deposited, and thus a pattern is formed in the p-electrode. Light from an active layer is emitted in a wide radiation angle by the pattern formed in the p-electrode, and reflectance is improved according to a patterned form and a refractive index of a material. Meanwhile, in depositing the p-electrode on the p type clad layer in the ultraviolet ray light emitting diode, when the p-electrode is deposited on only 10 to 70 % of the upper portion of the p type clad layer, an area where the p type clad layer is exposed is wide, therefore it is possible to increase a transmittance of ultraviolet rays through an area where the p-electrode is not deposited. A form of the p-electrode may be a mesh form, a punched plate form, a one-dimensional grid form, etc. The vertical type light emitting diode of the present invention is manufactured through a simple process, and has high reflection efficiency since light is emitted in a wide angle by the pattern of the p-electrode. Therefore, the present invention can provide a highly efficient vertical type light emitting diode. In addition, even when emitted light is ultraviolet rays, a transmittance can be increased.
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