首页> 外国专利> METHOD FOR MANUFACTURING VERTICAL TYPE LIGHT EMITTING DIODE, VERTICAL TYPE LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING ULTRAVIOLET RAY LIGHT EMITTING DIODE, AND ULTRAVIOLET RAY LIGHT EMITTING DIODE

METHOD FOR MANUFACTURING VERTICAL TYPE LIGHT EMITTING DIODE, VERTICAL TYPE LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING ULTRAVIOLET RAY LIGHT EMITTING DIODE, AND ULTRAVIOLET RAY LIGHT EMITTING DIODE

机译:垂直型发光二极管的制造方法,垂直型发光二极管,紫外线发光二极管的制造方法以及紫外线发光二极管

摘要

The present invention relates to a vertical type light emitting diode, a method for manufacturing the same, an ultraviolet ray light emitting diode, and a method for manufacturing the same. A vertical type light emitting diode according to the present invention is on the basis of a nitride semiconductor having a p-n conjunction structure, a transparent material layer is formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. After a stereoscopic pattern is formed in the transparent material layer, the p-electrode is deposited, and thus a pattern is formed in the p-electrode. Light from an active layer is emitted in a wide radiation angle by the pattern formed in the p-electrode, and reflectance is improved according to a patterned form and a refractive index of a material. Meanwhile, in depositing the p-electrode on the p type clad layer in the ultraviolet ray light emitting diode, when the p-electrode is deposited on only 10 to 70 % of the upper portion of the p type clad layer, an area where the p type clad layer is exposed is wide, therefore it is possible to increase a transmittance of ultraviolet rays through an area where the p-electrode is not deposited. A form of the p-electrode may be a mesh form, a punched plate form, a one-dimensional grid form, etc. The vertical type light emitting diode of the present invention is manufactured through a simple process, and has high reflection efficiency since light is emitted in a wide angle by the pattern of the p-electrode. Therefore, the present invention can provide a highly efficient vertical type light emitting diode. In addition, even when emitted light is ultraviolet rays, a transmittance can be increased.
机译:垂直型发光二极管,其制造方法,紫外线发光二极管及其制造方法技术领域本发明涉及垂直型发光二极管,其制造方法,紫外线发光二极管及其制造方法。根据本发明的垂直型发光二极管基于具有pn结结构的氮化物半导体,在p型覆盖层上形成透明材料层,该透明​​材料层的折射率不同于所述p型覆盖层的折射率。 p型包覆层并具有图案结构。反射金属电极层形成在透明材料层上作为p电极。在透明材料层中形成立体图案之后,沉积p电极,从而在p电极中形成图案。来自活性层的光通过在p电极上形成的图案以宽的辐射角发射,并且根据图案的形式和材料的折射率来提高反射率。同时,在将p电极沉积在紫外线发光二极管的p型覆盖层上时,当仅在p型覆盖层的上部的10%至70%上沉积p电极时,由于p型覆盖层的露出面积大,因此可以提高未沉积p电极的区域的紫外线透过率。 p电极的形式可以是网状,冲孔板状,一维网格状等。本发明的垂直型发光二极管通过简单的工艺制造,并且由于具有高反射效率,光通过p电极的图案以广角发射。因此,本发明可以提供高效的垂直型发光二极管。另外,即使当发射的光是紫外线时,也可以增加透射率。

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