Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al

摘要

/GaN structure were probed using monoenergetic positron beams. In Mg-implanted GaN, the major defect species was a complex of a Ga-vacancy and a nitrogen vacancy. After annealing above 1000°C, the major defect species was changed to vacancy clusters due to the agglomeration of vacancies. The carrier trapping/detrapping properties of the vacancy-type defects and their time dependences were also revealed. Al