Dislocation free InP/lnGaAs/lnP islands on Si by micro-channel selective area MOVPE

摘要

III-V monolithic integration on Si have long been the key component in silicon photonics toward inter/intra chip interconnections. Besides, efficient and low-cost integration of III-V on Si provides unique and attractive solutions for application such as bio-sensing, HEMT, IR imaging, and eye-safe LIDAR. To this end, selective area growth (SAG) of InP and related materials on Si(111) have been widely explored. However, due to the limitations in geometry and growth scheme, large area of material and high crystal quality cannot be both achieved.