机译:使用微通道选择性区域金属有机气相外延在Si(111)上无位错InGaAs
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan;
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan;
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;
机译:选择性区域金属有机气相外延中两步生长方法实现的30nm直径InGaAs纳米线阵列的间距独立实现。
机译:选择性区域金属有机气相外延生长InGaAs纳米线
机译:选择性区域金属有机气相外延在GaAs(111)B上形成InGaAs纳米线的生长和表征
机译:金属有机气相外延在(111)A GaAs上生长的压电InGaAs / GaAs / AlGaAs量子阱激光器
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:选择性区域金属有机气相外延对位置控制的III–V化合物半导体纳米线太阳能电池
机译:使用选择性区域金属有机气相外延制成的单电子晶体管的1位二进制决策图加法器电路