Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

摘要

When investigating Schottky contacts on heteroepitaxial β-Ga_2O_3 thin films, several non-idealities are observed in the current voltage characteristics, which cannot be accounted for with the standard diode current models. In this article, we therefore employed a model for the rigorous calculation of the diode currents in order to understand the origin of this non-idealities. Using the model and a few parameters determined from the measurements, we were able to simulate the characteristics with good agreement to the measured data for temperatures between 30 ℃ and 150 ℃. Fitting of the simulated curves to the measured curves allows a deeper insight into the microscopic origins of said non-idealities.