Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

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• 来源
  《中国物理：英文版》 |2021年第2期|514-519|共6页
• 作者

  Tao Fang; Ling-Qi Li; Guang-Rui Xia; Hong-Yu Yu;

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• 作者单位

  School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;

  School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;

  School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;

  Department of Materials Engineering the University of British Columbia Vancouver British Columbia V6T1Z4 Canada;

  School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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