Synthesis and Characterization of Ga Doped ZnO 1-D Nanostructures by Using Advanced Spray Pyrolysis Deposition Technique at Different Spraying Angles

摘要

ZnO is an n-type II–VI semiconductor material,with high conductivity, high transparency, directwide bandgap (3.37 eV) and high exciton bindingenergy (60 meV) at room temperature. Due tothose properties, ZnO is widely used intransparent conducting electrodes, field emissiondevices, chemical gas sensors, optoelectronicdevices, piezoelectric devices, electrical andoptical switching devices, flat screen displays andsunscreens. Incorporation of a dopant such asGa3+ could enhance its optical, electrical andthermal properties by generating extra electrons.Ga3+ is known as one of best dopant of Zn2+, asthey have comparable ionic radii1). In this report,Ga doped ZnO 1-D nanostructures weresynthesized by using the Advanced SprayPyrolysis Deposition (ASPD) technique withrotational, pulsed and atomized modes.