Electric-field control of spin transport property into InGaAs quantum dots from a tunnel-coupled quantum well

摘要

Remarkable advances of self-assembled semiconductor quantum dots (QDs) have been received significant attention as an ideal platform for strong confinements of the electronic and spin states. InGaAs-based QD-quantum well (QW) tunnel-coupled structures have been proposed to capture electron spin efficiently in layered device structures . In this research, external electric-field effects on spin injection of optically excited carriers in a QW into QDs are investigated. Spin-polarized electrons and holes in the QW are injected into the QDs through a GaAs barrier layer. We report time-resolved circularly polarized photoluminescence (PL) from QDs after optical generation of spins in the QW as a function of applied electrical field.