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First-principles study of anomalous and spin Hall conductivities in Fe/MgO superlattices with transition-metal insertions

机译:具有过渡金属插入的Fe / MgO超晶格异常和自旋霍尔电导率的第一性原理研究

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Hall effects have found applications in spintronic devices.Inferromagnetic material the Hall resistivity is proportional to the magnetization. This phenomenonis the anomalous Hall effect (AHE) which has important roles in the investigation and characterization of ferromagnetic materials. The spin Hall effect (SHE) and its inverse have been used to generate and detect the spin current in non-magnetic materials.Additionally,the SHE tunneling spectrahave been considered to provide guidelines for engineering high-SHE materials.It isimportant toelucidate the magnetic transport propertiessuch as AHE and SHE in the tunnel junctions.Here, in order to systematically investigate the magnetic transport properties as well as the effect of the geometrical and magnetic structures, we have performed magnetic transport calculation method by using full-potential linearized augmented plane-wave (FLAPW) method within a superlattice model,and discussed the effectof the insertions of heavy metals such as 4d and 5d transition-metal at the Fe/MgO interfaceto the magnetic transport properties.Self-consistent calculations were carried out based on the generalized gradient approximation, and the transport coefficients were evaluated using the Kubo formulations. For the Fe/MgO (assumingseveral atomic-layers of MgO)with onemonolayer of 4d(Ru, Rh, Pd) and 5d(Os, Ir, Pt)metals inserted at the Fe/MgO interface,wesystematically investigatedthe anomalous and spin Hall conductivities along the film normal.Our results show that the anomalous Hall conductivity (AHC) is enhanced due to the insertion.The spin Hall conductivity (SHC) is also enhanced, andthe magnitudesof SHC become largewhen5dtransition-metalelements are inserted. An analysis of the electronic structures for theorigin of the AHC and SHC enhancement by the insertions will bepresented.
机译:霍尔效应已在自旋电子器件中得到了应用。亚铁磁性材料的霍尔电阻率与磁化强度成正比。这种现象是异常霍尔效应(AHE),它在铁磁材料的研究和表征中具有重要作用。自旋霍尔效应(SHE)及其反函数已被用于生成和检测非磁性材料中的自旋电流。此外,SHE隧穿光谱已被认为可为工程化高SHE材料提供指导。为了系统地研究磁传输特性以及几何和磁结构的影响,我们使用全势线性化增强平面波进行了磁传输计算方法(FLAPW)方法研究了Fe / MgO界面上4d和5d过渡金属等重金属的插入对磁输运性能的影响。在广义梯度近似的基础上进行了自洽计算。 ,并且使用久保公式评估了运输系数。对于在Fe / MgO界面处插入4d(Ru,Rh,Pd)和5d(Os,Ir,Pt)金属单层的Fe / MgO(假定为MgO的几个原子层),我们系统地研究了沿反方向的自旋和霍尔电导率结果表明,插入5d过渡金属元素后,异常霍尔电导率(AHC)由于插入而增强,自旋霍尔电导率(SHC)也增强,并且SHC的大小变大。将介绍对通过插入来增强AHC和SHC的起源的电子结构的分析。

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