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First-principles calculation of dynamical properties of insulators in finite electric fields and anomalous Hall conductivity of ferromagnets based on Berry phase approach.

机译:基于贝里相位法的铁电体有限电场和霍尔电导率反常的第一性原理计算。

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摘要

We present first-principles methods for calculating two distinct types of physical quantities within the framework of density functional theory: the response properties of an insulator to finite electric fields, and the anomalous Hall conductivity of a ferromagnet. Both of the methods are closely related to the same ingredient, namely the Berry phase, a geometric phase acquired by a quantum system transporting in parameter space. We develop gauge-invariant formulations in which the random phases of Bloch functions produced by numerical subroutines are irrelevant.;First, we provide linear-response methods for calculating phonon frequencies, Born effective charge tensors and dielectric tensors for insulators in the presence of a finite electric field. The starting point is a variational total-energy functional with a field-coupling term that represents the effect of the electric field. This total-energy functional is expanded with respect to both small atomic displacements and electric fields within the framework of density-functional perturbation theory. The linear responses of field-polarized Bloch functions to atomic displacements and electric fields are obtained by minimizing the second-order derivatives of the total-energy functional. The desired second-order tensors are then constructed from these optimized first-order field-polarized Bloch functions.;Next, an efficient first-principles approach for computing the anomalous Hall conductivity is described. The intrinsic anomalous Hall conductivity in ferromagnets depends on subtle spin-orbit-induced effects in the electronic structure, and recent ab-initio studies found that it was necessary to sample the Brillouin zone at millions of k-points to converge the calculation. We start out by performing a conventional electronic-structure calculation including spin-orbit coupling on a uniform and relatively coarse k-point mesh. From the resulting Bloch states, maximally localized Wannier functions are constructed which reproduce the ab-initio states up to the Fermi level. With inexpensive Fourier and unitary transformations the quantities of interest are interpolated onto a dense k-point mesh and used to evaluate the anomalous Hall conductivity as a Brillouin-zone integral.;The present scheme, which also avoids the cumbersome summation over all unoccupied states in the Kubo formula, is applied to bcc Fe, giving excellent agreement with conventional, less efficient first-principles calculations.;Finally, we consider another ab-initio approach for computing the anomalous Hall conductivity based on Haldane’s Fermi-surface formulation. Working in the Wannier representation, the Brillouin zone is sampled on a large number of equally spaced parallel slices oriented normal to the total magnetization. On each slice, we find the intersections of the Fermi surface sheets with the slice by standard contour methods, organize these into a set of closed loops, and compute the Berry phase of the Bloch states as they are transported around these loops. The anomalous Hall conductivity is proportional to the sum of the Berry phases of all the loops on all the slices.
机译:我们提出了在密度泛函理论的框架内计算两种不同类型的物理量的第一性原理方法:绝缘子对有限电场的响应特性以及铁磁体的异常霍尔电导率。两种方法都与同一成分密切相关,即Berry相,Berry相是由在参数空间中传输的量子系统获得的几何相。我们开发了规范不变的公式,其中数值子程序产生的Bloch函数的随机相位是不相关的;首先,我们提供了线性响应方法来计算声子频率,有限条件下绝缘子的Born有效电荷张量和介电张量电场。起点是具有场耦合项的变分总能量函数,该场耦合项代表电场的影响。在密度泛函摄动理论的框架内,相对于小原子位移和电场,这种总能泛函得到了扩展。通过使总能函数的二阶导数最小化,可以获得场极化的Bloch函数对原子位移和电场的线性响应。然后,从这些优化的一阶场极化Bloch函数构造所需的二阶张量。接下来,描述一种用于计算异常霍尔电导率的有效一阶原理。铁磁体中固有的霍尔电导率异常取决于电子结构中微妙的自旋轨道感应效应,最近的从头算研究发现,有必要在数百万个k点采样布里渊区,以使计算收敛。我们首先执行常规的电子结构计算,包括在均匀且相对粗糙的k点网格上进行自旋轨道耦合。根据所得的布洛赫状态,构造了最大局部的万尼尔函数,该函数重现了从费米能级开始的从头开始的状态。通过廉价的傅立叶变换和单位变换,将感兴趣的量插值到致密的k点网格上,并以布里渊区积分的形式将霍尔电导率异常评估为当前的方案;该方案还避免了对所有未占用状态进行繁琐的求和最后,我们考虑了另一种从头算的方法,用于基于霍尔丹的费米表面公式来计算霍尔电导率的异常值。以Wannier表示工作,在大量垂直于总磁化强度的等间隔平行切片上采样了布里渊区。在每个切片上,我们通过标准轮廓方法找到费米表面薄片与切片的相交点,将它们组织成一组闭合环,并计算它们在这些环周围传输时布洛赫状态的Berry相。霍尔电导率异常与所有切片上所有回路的贝里相位之和成正比。

著录项

  • 作者

    Wang, Xinjie.;

  • 作者单位

    Rutgers The State University of New Jersey - New Brunswick.;

  • 授予单位 Rutgers The State University of New Jersey - New Brunswick.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 153 p.
  • 总页数 153
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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