Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applications

摘要

Embodiments are directed to using an anomalous hall effect (AHE) or a polarized spin hall effect (PSHE) to switch a magnetic moment of a free layer having perpendicular magnetic anisotropy (PMA). AHE/PSHE includes materials with spontaneous magnetic moment. Thus, the spin orientation generated by AHE/PSHE not only depends upon the geometrical orientation, but also on the magnetic moment orientation of the AHE/PSHE material. Therefore, out-of-plane polarized spins are injected into the magnetic free layer, and the corresponding spin current switches the magnetic moment of a magnetic free layer with PMA through the anti-damping mechanism. In some embodiments, an asymmetric bottom lead may be used, such that a tunneling current flows toward one side after it leaves the free layer.