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Correlation between Etching and Optical Properties of Organic Films for Multi-layer Resist

机译:多层抗蚀剂有机膜的刻蚀与光学性能的相关性

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摘要

The correlation between the amount and rate of etching and various properties of organic film for multi-layer resist (MLR) was investigated. The etching critical dimension (CD) of 140-nm pitch interconnects is controlled by the etching conditions as well as by the properties of the organic film used as the bottom layer resist. Six organic films were tested that had different densities, hardness values, refractive indexes, and FT-IR peaks. Patterned samples of these films were exposed using electron projection lithography. The results showed amount of side etching, which effects the etching CD of interconnects, of the bottom layer depended on the etching rate of the film. In turn, the etching rate depended on a film's hardness and refractive index, but not on its density. The etching rate decreased with increasing hardness and with increasing refractive index in the visible wavelength spectrum. Consequently, the etching CD of interconnects can be better controlled by using an organic film as the bottom layer resist when the film has appropriate properties.
机译:研究了蚀刻量和蚀刻速率与多层抗蚀剂有机膜(MLR)的各种特性之间的相关性。 140纳米间距互连的蚀刻临界尺寸(CD)由蚀刻条件以及用作底层抗蚀剂的有机膜的特性控制。测试了六种具有不同密度,硬度值,折射率和FT-IR峰的有机膜。这些膜的图案化样品使用电子投影光刻法曝光。结果表明,底层的侧面蚀刻量取决于薄膜的蚀刻速率,而侧面蚀刻量会影响互连的蚀刻CD。反过来,蚀刻速率取决于膜的硬度和折射率,而不取决于膜的密度。刻蚀速率随着硬度的增加和可见光谱中折射率的增加而降低。因此,当膜具有适当的性能时,通过使用有机膜作为底层抗蚀剂,可以更好地控制互连的蚀刻CD。

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