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Correlation between Etching and Optical Properties of Organic Films for Multi-layer Resist

机译:多层抗蚀剂有机膜的蚀刻和光学性质的相关性

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The correlation between the amount and rate of etching and various properties of organic film for multi-layer resist (MLR) was investigated. The etching critical dimension (CD) of 140-nm pitch interconnects is controlled by the etching conditions as well as by the properties of the organic film used as the bottom layer resist. Six organic films were tested that had different densities, hardness values, refractive indexes, and FT-IR peaks. Patterned samples of these films were exposed using electron projection lithography. The results showed amount of side etching, which effects the etching CD of interconnects, of the bottom layer depended on the etching rate of the film. In turn, the etching rate depended on a film's hardness and refractive index, but not on its density. The etching rate decreased with increasing hardness and with increasing refractive index in the visible wavelength spectrum. Consequently, the etching CD of interconnects can be better controlled by using an organic film as the bottom layer resist when the film has appropriate properties.
机译:研究了研究蚀刻量与多层抗蚀剂(MLR)的有机膜的各种性能之间的相关性。通过蚀刻条件以及用作底层抗蚀剂的有机膜的性质来控制140nm间距互连的蚀刻临界尺寸(CD)。测试了具有不同密度,硬度值,折射率和FT-IR峰的六种有机膜。使用电子投影光刻曝光这些薄膜的图案样品。结果显示出侧蚀刻的量,其效果邻接的蚀刻CD,底层依赖于膜的蚀刻速率。反过来,蚀刻速率依赖于薄膜的硬度和折射率,但不是其密度。随着硬度的增加并且随着可见波长光谱中的折射率增加,蚀刻速率降低。因此,当薄膜具有适当的性质时,通过使用有机膜可以更好地控制互连的蚀刻CD。

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