Design of Dissolution Inhibitors for Chemically Amplified Photolithographic Systems

摘要

Current semiconductor manufacturing utilizes exposure wavelengths from 365 nm to 193 nm, and current research is centered on photoresist development for 157 nm. Our research group discovered the strong inhibition response in the fluorocarbon resins designed for use at 157 nm~1. We have been investigating dissolution inhibitors (DIs), some of which also serve as photoacid generators (PAGs), that strongly inhibit the dissolution of poly(2-(3, 3, 3-trifluoro-2-trifuoromethyl-2-hydroxypropyl) bicyclo[2.2.1]heptane-5-ene) (PNBHFA) (1) and the Asahi glass RS001 polymer (2). These inhibiting PAGs, in particular, result in the creation of 2-component resist systems consisting only of the resin polymer and the PAG-DI. This design enables greater ease of formulation, reduces the number of variables present in resist development, and offers improvements in sensitivity and line edge roughness. The synthetic approach has been to design transparent, inhibiting compounds for use at 157 nm. However, during our investigation of these compounds, we found that there is an inherent "backwards compatibility" for these PAGs and DIs at 193 nm, 248 nm and 365 nm. This has created the ability to effectively design dissolution inhibitors, photoactive or otherwise, that span virtually all of the wavelengths used in photolithographic processes today. Here we will present the design, development and imaging of modern dissolution inhibitors suitable for use in a wide range of photolithography technologies.