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Correlation between the sensitivity and the contrast of polymer resists for developing in good and bad solvents

机译:在好和坏溶剂中显影的聚合物抗蚀剂的感光度和对比度之间的相关性

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Abstract: The development processes in microlithography consist in removing of exposure region with rate V exceeding the dissolution rate of unexposed regions. The technology characteristics of the resists are the contrast, the sensitivity and the resolution. These characteristics depend on the resist response to the irritation and on the development conditions. We want to devote this work to the analysis of correlation between the resolution, the contrast, the sensitivity determined by the indicated method and the exposure dose for homogeneous irradiation. !8
机译:摘要:微光刻技术的发展过程包括以大于未曝光区域溶解速度的速率去除曝光区域。抗蚀剂的技术特性是对比度,灵敏度和分辨率。这些特性取决于抗蚀剂对刺激的响应以及显影条件。我们希望将这项工作用于分辨率,对比度,通过指定方法确定的灵敏度和均匀照射的剂量之间的相关性分析。 !8

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