Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist

摘要

Abstract: A novel photoacid generator, ALS (alkylsulfonium sa cyclohexylmethyl(2-oxocyclohexyl)sulfonium trifluoromethane- sulfonate) for ArF excimer laser ($lambda$EQ@193 nm) lithography and a single-layer resist have been developed. ALS shows high transparency at 193 nm and photoacid generating capability on irradiation by ArF excimer laser. A novel methacrylate terpolymer, poly(tricyclo$LB@5.2.1.0$+2,6$/$RB@decanylmethacrylate-co-2- tetrahydropyranylmethacrylate-co-methacrylic acid), is synthesized as a base resin. The resist, consisting of ALS and the polymer, shows chemical amplification and good resolution. A 0.2-$mu@m line and space negative-tone image is observed at 15 mJ/cm$+2$/ dose using an ArF excimer laser. !18