Quantum dot lasers and relevant nanoheterostructures

摘要

Spectral and power characteristics of QD stripe lasers operating in two-state lasing regime have been studied in a wide range of operation conditions. It was demonstrated that neither self-heating nor increase of the homogeneous broadening are responsible for quenching of the ground-state lasing beyond the two-state lasing threshold. It was found that difference in electron and hole capture rates strongly affects light-current curve. Modulation p-type doping is shown to enhance the peak power of GS lasing transition. Microring and microdisk structures (D = 4-9 urn) comprising 1.3 μm InAs/InGaAs quantum dots have been fabricated and studied by μ-PL and NSOM. Ground-state lasing was achieved well above root temperature (up to 380 K). Effect of inner diameter on threshold characteristics was evaluated.