Erbium Doped Quantum Dot and Si:O and Plasmon Resonance Enabled Quantum Dot Nanoscale Lasers

摘要

The most significant accomplishments in this project are: (a) the demonstration of optically pumped silicon based light emitters utilizing colloidal PbSe QD which are inserted in PC microcavities for efficient coupling. Enhancements of spontaneous emission with a linewidth of-2.0 run, corresponding to a cavity Q factor of 775, is observed at 1550 nm at room temperature; (b) an electrically injected silicon based light source using PbSe QDs, which are more compact and versatile. With a current density of 113 mA/cm2, a resonance at X=1669 nm having a linewidth of 4nm is observed, which corresponds to a cavity Q factor of-420. This nanoscale light source based on silicon, which is capable of being fabricated on CMOS chips, is of interest as a practical technology for optical interconnects in silicon photonics; (c) the demonstration of possibility of surface Plasmon enabled nanolaser with round- trip gain in the sense that the transmission in the waveguide increases as the pumping power increases.